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In this work, we use charge extraction via organic overlayer deposition tolower the chemical potential of topological insulator Bi2Se3 thin films intothe intrinsic (bulk-insulating) regime. We demonstrate the tuning andstabilization of intrinsic topological insulators at high mobility withlow-cost organic films. With the protection of the organic charge extractionlayers tetrafluorotetracyanoquinodimethane(F4TCNQ) ortris(acetylacetonato)cobalt(III) (Co(acac)3), the sample is stable in theatmosphere with chemical potential ~135 meV above the Dirac point (85 meV belowthe conduction band minimum, well within the topological insulator regime)after four months, which is an extraordinary level of environmental stability.The Co complex represents the first use of an organometallic for modulating TIcharge density. The mobility of surface state electrons is enhanced as high as~2000 cm2/Vs. Even at room temperature, a true topologically insulating stateis realized and stabilized for months' exposure to the atmosphere.

Tuning and Stabilizing Topological Insulator Bi2Se3 in the Intrinsic Regime by Charge Extraction with Organic Overlayers