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GaAs/Fe$_{3}$Si core/shell nanowire structures were fabricated bymolecular-beam epitaxy on oxidized Si(111) substrates and investigated bysynchrotron x-ray diffraction. The surfaces of the Fe$_3$Si shells exhibitnanofacets. These facets consist of well pronounced Fe$_3$Si{111} planes.Density functional theory reveals that the Si-terminated Fe$_3$Si{111} surfacehas the lowest energy in agreement with the experimental findings. We cananalyze the x-ray diffuse scattering and diffraction of the ensemble ofnanowires avoiding the signal of the substrate and poly-crystalline filmslocated between the wires. Fe$_3$Si nanofacets cause streaks in the x-rayreciprocal space map rotated by an azimuthal angle of 30{\deg} compared withthose of bare GaAs nanowires. In the corresponding TEM micrograph the facetsare revealed only if the incident electron beam is oriented along[1$\overline{1}$0] in accordance with the x-ray results. Additional maxima inthe x-ray scans indicate the onset of chemical reactions between Fe$_{3}$Sishells and GaAs cores occurring at increased growth temperatures.

Diffraction at GaAs/Fe$_{3}$Si core/shell nanowires: the formation of nanofacets