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Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme(~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unitcell at complex oxide heterointerfaces (such as SrTiO3/GdTiO3 or SrTiO3/SmTiO3)is challenging because it requires enormous gate capacitances. One way toachieve large gate capacitances is by geometrical capacitance enhancement infin structures. In this work, we fabricate both Au-gated planar field effecttransistors (FETs) and Fin-FETs with varying fin-widths on 60nm SrTiO3/5nmSmTiO3 thin films grown by hybrid molecular beam epitaxy (hMBE). We find thatthe FinFETs exhibit higher gate capacitance compared to planar FETs. By scalingdown the SrTiO3/SmTiO3 fin widths, we demonstrate further gate capacitanceenhancement, almost twice compared to the planar FETs. In the FinFETs withnarrowest fin-widths, we demonstrate a record 2DEG electron concentrationmodulation of ~2.4 x 1014 cm-2.

Large Electron Concentration Modulation using Capacitance Enhancement in SrTiO3/SmTiO3 FinFETs