English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The thermal radiative near field transport between vanadium dioxide andsilicon oxide at submicron distances is expected to exhibit a strong dependenceon the state of vanadium dioxide which undergoes a metal-insulator transitionnear room temperature. We report the measurement of near field thermaltransport between a heated silicon oxide micro-sphere and a vanadium dioxidethin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nmvanadium dioxide thin film varied to be below and above themetal-insulator-transition, the sphere temperatures were varied in a rangebetween 100 and 200 Celsius. The measurements were performed using avacuum-based scanning thermal microscope with a cantilevered resistive thermalsensor. We observe a thermal conductivity per unit area between the sphere andthe film with a distance dependence following a power law trend and aconductance contrast larger than 2 for the two different phase states of thefilm.

Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition