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With ZnTe as an example, we use two different methods to unravel thecharacteristics of the growth of nanowires by gold-catalyzed molecular beamepitaxy at low temperature. In the first approach, CdTe insertions have beenused as markers, and the nanowires have been characterized by scanningtransmission electron microscopy, including geometrical phase analysis, andenergy dispersive electron spectrometry; the second approach uses scanningelectron microscopy and the statistics of the relationship between the lengthof the tapered nanowires and their base diameter. Axial and radial growth arequantified using a diffusion-limited model adapted to the growth conditions;analytical expressions describe well the relationship between the NW length andthe total molecular flux (taking into account the orientation of the effusioncells), and the catalyst-nanowire contact area. A long incubation time isobserved. This analysis allows us to assess the evolution of the diffusionlengths on the substrate and along the nanowire sidewalls, as a function oftemperature and deviation from stoichiometric flux.

Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy