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The discovery of graphene has ignited intensive investigation on twodimensional (2D) materials. Among them, transition metal dichalcogenide (TMDC),a typical representative, attracts much attention due to the excellentperformance in field effect transistor (FET) related measurements andapplications. Particularly, when TMDC eventually reaches few-layer dimension, awide range of electronic and optical properties, in striking contrast to bulksamples, are detected. In this Letter, we synthesized single crystalline WS2nanoflakes by physical vapor deposition (PVD) method and carried out a seriesof transport measurements of contact resistance and magnetoresistance. Focusedion beam (FIB) technology was applied to deposit Pt electrodes on WS2 flakes.Different from the electron beam lithography (EBL) fabricated electrodes,FIB-deposited leads exhibited ohmic contact, resolving the dilemma of Schottkybarrier. Furthermore, a temperature-modulated negative-to-positive transitionof magnetoresistance (MR) associated with a crossover of carrier type atsimilar temperature was demonstrated. Our work offers a pathway to optimize thecontact for TMDC and reveals the magnetoresistance characteristics of WS2flakes, which may stimulate further studies on TMDC and corresponding potentialelectronic and optoelectronic applications.

Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact