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We report electronic transport measurements through a silicon hybrid doublequantum dot consisting of a donor and a quantum dot. Transport spectra showresonant tunneling peaks involving different valley states, which illustratethe valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gatebias dependence of double dot transport allows a first direct observation ofthe valley splitting in the quantum dot, which is controllable between 160-240ueV with an electric field dependence 1.2 +- 0.2 meV/(MV/m). A large valleysplitting is an essential requirement to implement a physical electron spinqubit in a silicon quantum dot.

Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot