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We present the detailed study of the spin kinetics of the nitrogen (N) donorelectrons in 6H SiC wafers grown by Lely method and by sublimation "sandwichmethod" (SSM) with a donor concentration of about 10^17 cm^-3 at T = 10-40 K.The donor electrons of the N donors substituting quasi-cubic "k1" and "k2"sites (Nk1,k2) in both types of the samples revealed the similar temperaturedependence of the spin-lattice relaxation rate (T1^-1), which was described bythe direct one-phonon and two-phonon processes induced by the acoustic phononsproportional to T and to T^9, respectively. The character of the temperaturedependence of the T1^-1 for the donor electrons of N substituting hexagonal("h") site (Nh) in both types of 6H SiC samples indicates that the donorelectrons relax through the fast-relaxing centers by means of thecross-relaxation process. The observed enhancement of the phase memoryrelaxation rate (Tm^-1) with the temperature increase for the Nh donors in bothtypes of the samples, as well as for the Nk1,k2 donors in Lely grown 6H SiC,was explained by the growth of the free electron concentration with thetemperature increase and their exchange scattering at the N donor centers. Theobserved significant shortening of the phase memory relaxation time Tm for theNk1,k2 donors in the SSM grown sample with the temperature lowering is causedby hopping motion of the electrons between the occupied and unoccupied statesof the N donors at Nh and Nk1,k2 sites. The impact of the N donor pairs,triads, distant donor pairs formed in n-type 6H SiC wafers on the spinrelaxation times was discussed.

The spin relaxation of nitrogen donors in 6H SiC crystals as studied by the electron spin echo method