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We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAsquantum dots(QDs) embedded into a metamorphic step-graded InxGa1âˆ’xAs buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in InxAlyGa1âˆ’xâˆ’yAs layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescenceemission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting device

Broadband light sources based on InAs/InGaAs metamorphic quantum dots