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We present a new approach of back gate patterning that is compatible with therequirements of highest mobility molecular beam epitaxy. Contrary to commonback gating techniques, our method is simple, reliable and can be scaled up forentire wafers. The back gate structures are defined by local oxygenimplantation into a silicon doped GaAs epilayer, which suppresses theconductance without affecting the surface quality.

Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation