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We report an improved photosensitivity in few-layer tin disulfide (SnS2)field-effect transistors (FETs) following doping with CdSe/ZnS core/shellquantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500percent increase in the photocurrent response compared with the startingSnS2-only FET device and a spectral responsivity reaching over 650 A/W at 400nm wavelength. The negligible electrical conductance in a control QD-only FETdevice suggests that energy transfer between QDs and SnS2 is the main mechanismresponsible for the sensitization effect, which is consistent with the strongspectral overlap between QD photoluminescence and SnS2 optical absorption aswell as the large nominal donor-acceptor interspacing between QD core and SnS2.We also find an enhanced charge carrier mobility in hybrid QD-SnS2 FETs whichwe attribute to a reduced contact Schottky barrier width due to an elevatedbackground charge carrier density.

Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity