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We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs doublequantum well structure that can be configured as both an electron-hole bilayerand a hole-hole bilayer, with an insulating barrier of only 10 nm between thetwo quantum wells. The Coulomb drag resistivity is a direct measure of thestrength of the interlayer particle-particle interactions. We explore thestrongly interacting regime of low carrier densities (2D interaction parameter$r_s$ up to 14). Our ambipolar device design allows comparison between theeffects of the attractive electron-hole and repulsive hole-hole interactions,and also shows the effects of the different effective masses of electrons andholes in GaAs.

Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device