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We investigated the origin of the high reverse leakage current in lightemitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown bymolecular beam epitaxy on Si substrates. To this end, capacitance deep leveltransient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V)measurements were performed on a fully processed NW-LED. The DLTS measurementsreveal the presence of two distinct electron traps with high concentrations inthe depletion region of the p-i-n junction. These band gap states are locatedat energies of $570\pm20$ and $840\pm30$ meV below the conduction band minimum.The physical origin of these deep level states is discussed. Thetemperature-dependent I-V characteristics, acquired between 83 and 403 K, showthat different conduction mechanisms cause the observed leakage current. On thebasis of all these results, we developed a quantitative physical model forcharge transport in the reverse bias regime. By taking into account the mutualinteraction of variable range hopping and electron emission from Coulombic trapstates, with the latter being described by phonon-assisted tunnelling and thePoole-Frenkel effect, we can model the experimental I-V curves in the entirerange of temperatures with a consistent set of parameters. Our model should beapplicable to planar GaN-based LEDs as well. Furthermore, possible approachesto decrease the leakage current in NW-LEDs are proposed.

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires