English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We have studied the temperature behavior of the electron spin resonance (ESR)spectra of nitrogen (N) donors in n-type 6H SiC crystals grown by Lely andsublimation sandwich methods (SSM) with donor concentration of 10^17 cm^(-3) atT=60-150 K. A broad signal in the ESR spectrum was observed at T>=80 K withLorentzian lineshape and gpar=2.0043(3), gper=2.0030(3), which was previouslyassigned in the literature to the N donors in the 1s(E) excited state. Based onthe analysis of the ESR lineshape, linewidth and g-tensor we attribute thissignal to the conduction electrons (CE). The emergence of the CE ESR signal atT>80 K was explained by the ionization of electrons from the 1s(A) ground and1s(E) excited states of N donors to the conduction band while the observedreduction of the hyperfine (hf) splitting for the Nk1,k2 donors with thetemperature increase is attributed to the motion narrowing effect of the hfsplitting. The temperature dependence of CE ESR linewidth is described by anexponential law (Orbach process) with the activation energy corresponding tothe energy separation between 1s(A1) and 1s(E) energy levels for N residing atquasi-cubic sites (Nk1,k2). The theoretical analysis of the temperaturedependence of microwave conductivity measured by the contact-free method showsthat due to the different position of the Fermi level in two samples theionization of free electrons occurs from the energy levels of Nk1,k2 donors inLely grown samples and from the energy level of Nh residing at hexagonalposition in 6H SiC grown by SSM

Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance