English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The Hall effect, and the diagonal resistance, which indicates a residualresistivity $\rho_{xx} \approx h/4e^{2}$, are experimentally examined over thep$\leftrightarrow$n transition about the nominal neutrality point in chemicalvapor deposition (CVD) grown graphene. A distribution of neutrality potentialsis invoked in conjunction with multi-carrier conduction to model theexperimental observations. From the modeling, we extract the effective residualelectron- and hole- densities around the nominal neutrality point. The resultsindicate mixed transport due to co-existing electrons and holes in large areazero-band gap CVD graphene devices, which indicates domain confined ambipolarcurrents broadly over the gate-induced n $\leftrightarrow$ p transition.

applied physics letters

Method for determining the residual electron- and hole- densities about  the neutrality point over the gate-controlled n $\leftrightarrow$ p  transition in graphene