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Polarization induced degenerate $n$-type doping with electron concentrationsup to $\sim$10$^{20}$\,cm$^{-3}$ is achieved in graded Al$_{x}$Ga$_{1-x}$Nlayers ($x$: 0\%$\rightarrow$37\%) grown on unintentionally doped and on$n$-doped GaN:Si buffer/reservoir layers by metal organic vapor phase epitaxy.High resolution x-ray diffraction, transmission electron microscopy andelectron energy loss spectroscopy confirm the gradient in the composition ofthe Al$_{x}$Ga$_{1-x}$N layers, while magnetotransport studies reveal theformation of a three dimensional electron slab, whose conductivity can beadjusted through the GaN(:Si) buffer/reservoir.

Controlling a three dimensional electron slab of graded Al$_{x}$Ga$_{1-x}$N