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We perform tilt-field transport experiment on inverted InAs/GaSb which hostsquantum spin Hall insulator. By means of coincidence method, Landau level (LL)spectra of electron and hole carriers are systematically studied at differentcarrier densities tuned by gate voltages. When Fermi level stays in theconduction band, we observe LL crossing and anti-crossing behaviors at odd andeven filling factors respectively, with a corresponding g-factor of 11.5. Itremains nearly constant for varying filling factors and electron densities. Onthe contrary, for GaSb holes only a small Zeeman splitting is observed even atlarge tilt angles, indicating a g-factor of less than 3.

Effective g-factors of carriers in inverted InAs/GaSb bilayers