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A new nine-dimensional potential energy surface (PES) and dipole momentsurface (DMS) for silane have been generated using high-level \textit{abinitio} theory. The PES, CBS-F12$^{\,\mathrm{HL}}$, reproduces all fourfundamental term values for $^{28}$SiH$_4$ with sub-wavenumber accuracy,resulting in an overall root-mean-square (rms) error of $0.63{\,}$cm$^{-1}$.The PES is based on explicitly correlated coupled cluster calculations withextrapolation to the complete basis set limit, and incorporates a range ofhigher-level additive energy corrections to account for core-valence electroncorrelation, higher-order coupled cluster terms, and scalar relativisticeffects. Systematic errors in computed intra-band rotational energy levels arereduced by empirically refining the equilibrium geometry. The resultant Si-Hbond length is in excellent agreement with previous experimental andtheoretical values. Vibrational transition moments, absolute line intensitiesof the $\nu_3$ band, and the infrared spectrum for $^{28}$SiH$_4$ includingstates up to $J=20$ and vibrational band origins up to $5000{\,}$cm$^{-1}$ arecalculated and compared with available experimental results. The DMS tends tomarginally overestimate the strength of line intensities. Despite this, bandshape and structure across the spectrum are well reproduced and show goodagreement with experiment. We thus recommend the PES and DMS for future use.

A global potential energy surface and dipole moment surface for silane