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The growth, atomic structure, and electronic property of trilayer graphene(TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopyand spectroscopy in combined with tight-binding approximation (TBA)calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice dueto the screening effect of the bottom two layers and the AB-stacking in the toptwo layers. The coexistence of AA- and AB-stacking in the bottom two layersleads to three different stacking orders of TLG, namely, ABA-, ABC-, andABB-stacking. STS measurements combined with TBA calculations reveal that thedensity of states of TLG with ABC- and ABB-stacking is characterized by one andtwo sharp peaks near to the Fermi level, respectively, in contrast to theV-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG onRu(0001) might be an ideal platform for exploring stacking-dependent electronicproperties of graphene.

Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)