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The thermal gradient along indium-arsenide nanowires was engineered by acombination of fabricated micro- trenches in the supporting substrate andfocused laser irradiation. This allowed local control of thermally activatedoxidation reactions of the nanowire on the scale of the diffraction limit. Thelocality of the oxidation was detected by micro-Raman mapping, and the resultswere found consistent with numerical simulations of the temperature profile.Applying the technique to nanowires in electrical devices the locally oxidizednanowires remained conducting with a lower conductance as expected for aneffectively thinner conducting core.

Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation