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To explore the origin of the Fermi level pinning in germanium we investigatethe Ge(001) and Ge(001):H surfaces. The absence of relevant surface states inthe case of Ge(001):H should unpin the surface Fermi level. This is notobserved. For samples with donors as majority dopants the surface Fermi levelappears close to the top of the valence band regardless of the surfacestructure. Surprisingly, for the passivated surface it is located below the topof the valence band allowing scanning tunneling microscopy imaging within theband gap. We argue that the well known electronic mechanism behind band bendingdoes not apply and a more complicated scenario involving ionic degrees offreedom is therefore necessary. Experimental techniques involve four pointprobe electric current measurements, scanning tunneling microscopy andspectroscopy.

Fermi level pinning at the Ge(001) surface - A case for non-standard explanation