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We report on Terahertz detection by inverted band structure HgTe-based FieldEffect Transistor up to room temperature. At low temperature, we show thatnonlinearities of the transistor channel allows for the observation of thequantum phase transition due to the avoided crossing of zero-mode Landau levelsin HgTe 2D topological insulators. These results pave the way towards Terahertztopological Field Effect Transistors.

Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors