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The thermoelectric transport coefficients of electrons in two recentlyemerged transition metal dichalcogenides(TMD), MoS2 and WSe2, are calculated bysolving Boltzmann Transport equation and coupled electrical and thermal currentequations using Rode iterative technique. Scattering from localized donorimpurities, acoustic deformation potential, longitudinal optical (LO) phonons,and substrate induced remote phonon modes are taken into account. Hybridizationof TMD plasmon with remote phonon modes is investigated. Dynamic screeningunder linear polarization response is explored in TMDs sitting on a dielectricenvironment and the screened electron-phonon coupling matrix elements arecalculated. The effect of screening and substrate induced remote phononmediated scattering on the transport coefficients of the mentioned materials isexplained. The transport coefficients are obtained for a varying range oftemperature and doping density for three different types of substrates SiO2,Al2O3, and HfO2. The thermoelectric properties of interest including Seebeckcoefficient, Peltier coefficient, and electronic thermal conductivity arecalculated.

Thermoelectric Transport Coefficients in Mono-layer MoS2 and WSe2 Role of Substrate, Interface Phonons, Plasmon, and Dynamic Screening