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SrTiO$_{3}$ (STO) epitaxial thin films and heterostructures are ofconsiderable interest due to the wide range of functionalities they exhibit.The alloy perovskite (LaAlO$_{3}$)$_{0.3}$-(Sr$_{2}$AlTaO$_{6}$)$_{0.7}$ (LSAT)is commonly used as a substrate for these material structures due to itsstructural compatibility with STO and the strain-induced ferroelectric responsein STO films grown on LSAT. However, surprisingly little is known about theelectronic properties of the STO/LSAT interface despite its potentiallyimportant role in affecting the overall electronic structure of system. Weexamine the band alignment of STO/LSAT heterostructures using x-rayphotoelectron spectroscopy for epitaxial STO films deposited using twodifferent molecular beam epitaxy approaches. We find that the valence bandoffset ranges from +0.2(1) eV to -0.2(1) eV depending on the film surfacetermination. From these results we extract a conduction band offset from-2.4(1) eV to -2.8(1) eV, indicating that the conduction band edge is moredeeply bound in STO and that LSAT will not act as a sink or trap for electronsin the supported film or multilayer.

Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001)