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In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-gm), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si3N4, Rapid Thermal Chemical Vapor Deposition Si3N4, and Atomic Layer Deposition (ALD) Al2O3) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (Dit), the amount of border traps, and the threshold voltage (VTH) shift during a positive gate bias stress can be obtained. The results show that the VTH shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the VTH shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density an...

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors