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We studied the resistive memory switching in pulsed laser deposited amorphousLaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM)applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memorycells with all four possible RS modes ( positive unipolar, positive bipolar,negative unipolar, and negative bipolar) having high RON and ROFF ratios (inthe range of 104 to 105) and non-overlapping switching voltages (set voltage,VON 3.6 to 4.2 V and reset voltage, VOFF 1.3 to 1.6 V) with a small variationof about 5 to 8 percent. X ray photoelectron spectroscopic studies togetherwith temperature dependent switching characteristics revealed the formation ofmetallic holmium (Ho) and oxygen vacancies (VO) constituted conductivenanofilaments (CNFs) in the low resistance state (LRS). Detailed analysis ofcurrent versus voltage characteristics further corroborated the formation ofCNFs based on metal like (Ohmic) conduction in LRS. Simmons Schottky emissionwas found to be the dominant charge transport mechanism in the high resistancestate.

Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous ternary rare earth LaHoO3 thin films