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Using a combination of continuous wave and time-resolved spectroscopy, westudy the effects of interfacial conditions on the radiative lifetimes andphotoluminescence intensities of colloidal CdTe/CdS quantum dots (QDs) embeddedin a three-dimensional nanostructured silicon (NSi) matrix. The NSi matrix wasthermally oxidized under different conditions to change the interfacial oxidethickness. QDs embedded in a NSi matrix with ~0.5 nm of interfacial oxideexhibited reduced photoluminescence intensity and nearly five times shorterradiative lifetimes (~16 ns) compared to QDs immobilized within completelyoxidized, nanostructured silica (NSiO2) frameworks (~78 ns). Optical absorptionby the sub-nm oxidized NSi matrix partially lowers QD emission intensitieswhile non-radiative carrier recombination and phonon assisted transitionsinfluenced by defect sites within the oxide and NSi are believed to be theprimary factors limiting the QD exciton lifetimes in the heterostructures.

Interfacial Effects on the Optical Properties of CdTe/CdS Quantum Dots