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Using first-principles calculations, we show that the conduction and valenceband energies and their deformation potentials exhibit a non-negligiblecompositional bowing in strained ternary semiconductor alloys such as InGaAs.The electronic structure of these compounds has been calculated within theframework of local density approximation and hybrid functional approach forlarge cubic supercells and special quasi-random structures, which represent twokinds of model structures for random alloys. We find that the predicted bowingeffect for the band energy deformation potentials is rather insensitive to thechoice of the functional and alloy structural model. The direction of bowing isdetermined by In cations that give a stronger contribution to the formation ofthe In$_{x}$Ga$_{1-x}$As valence band states with $x\gtrsim 0.5$, compared toGa cations.

Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: a first-principles study