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Silver doped ZnO films have been grown on sapphire (0001) substrates by pulsed laser deposition. Hall measurements indicate that p-type conductivity is realized for the films deposited at 500 degrees C and 750 degrees C. Transmission electron microscopy images show more obvious and higher density of stacking faults (SFs) present in the p-type ZnO films as compared to the n-type films. Top view and cross sectional photoluminescence of the n- and p-type samples revealed free excitonic emission from both films. A peak at 3.314 eV, attributed to SF emission, has been observed only for the n-type sample, while a weak neutral acceptor peak observed at 3.359 eV in the p-type film. The SF emission in the n-type sample suggests localization of acceptor impurities nearby the SFs, while lack of SF emission for the p-type sample indicates the activation of the Ag acceptors in ZnO. (C) 2015 AIP Publishing LLC.<p>Funding Agencies|National Science Foundation [DMR-0846504]; Texas AandM Graduate Diversity Fellowship; Linkoping Linnaeus Initiative for Novel Functional Materials (LiLi-NFM)</p

Photoluminescence study of p-type vs. n-type Ag-doped ZnO films