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Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at\ud600  C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy\udtechniques and atom probe tomography. Mn is found to be incorporated primarily in the form of\udnon-magnetic tetragonal Ga0.82Mn0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs,\udwhile trace amounts of Mn (2264 at. ppm) are also distributed randomly in the NW bodies without\udforming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction\udin the MBE chamber, since they are partially embedded in neck regions of the NWs. The\udGa0.82Mn0.18 nanocrystals and the low Mn concentration in the NW bodies are insufficient to\udinduce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in\udGaAs even in 1-D NW growth via the vapor-liquid-solid processPeer reviewe

Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires