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Effects of residual C impurities and Ga vacancies on the dynamicinstabilities of AlN/AlGaN/GaN metal insulator semiconductor high electronmobility transistors are investigated. Secondary ion mass spectroscopy,positron annihilation spectroscopy, steady state and time-resolvedphotoluminescence (PL) measurements have been performed in conjunction withelectrical characterization and current transient analyses. The correlationbetween yellow luminescence (YL), C- and Ga vacancy concentration isinvestigated. Time-resolved PL indicating the C$_{\mathrm{N}}$O$_{\mathrm{N}}$complex as the main source of the YL, while Ga vacancies or related complexeswith C seem not to play a major role. The device dynamic performance is foundto be significantly dependent on the C concentration close to the channel ofthe transistor. Additionally, the magnitude of the YL is found to be inagreement with the threshold voltage shift and with the on-resistancedegradation. Trap analysis of the GaN buffer shows an apparent activationenergy of $\sim$0.8eV for all samples, pointing to a common dominating trappingprocess and that the growth parameters affect solely the density of trapcentres. It is inferred that the trapping process is likely to be directlyrelated to C based defects.

Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs