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We demonstrate a vertical field-effect transistor based on a graphene/MoSe2van der Waals (vdW) heterostructure. The vdW interface between the graphene andMoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3,suggesting a high-quality interface. Owing to the low density of states ingraphene, the position of the Fermi level in the graphene can be stronglymodulated by an external electric field. Therefore, the Schottky barrier heightat the graphene/MoSe2 vdW interface is also modulated. We demonstrate a largecurrent ON-OFF ratio of 10^5. These results point to the potential highperformance of the graphene/MoSe2 vdW heterostructure for electronicsapplications.

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface