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This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wellsgrown on bulk GaN for intersubband optoelectronics in the short- andmid-wavelength infrared ranges. The characterization results are compared tothose for reference samples grown on the polar c-plane, and are verified byself-consistent Schr\"odinger-Poisson calculations. The best results in termsof mosaicity, surface roughness, photoluminescence linewidth and intensity, aswell as intersubband absorption are obtained from m-plane structures, whichdisplay room-temperature intersubband absorption in the range from 1.5 to 2.9um. Based on these results, a series of m-plane GaN/AlGaN multi-quantum-wellswere designed to determine the accessible spectral range in the mid-infrared.These samples exhibit tunable room-temperature intersubband absorption from 4.0to 5.8 um, the long-wavelength limit being set by the absorption associatedwith the second order of the Reststrahlen band in the GaN substrates.

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions