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We theoretically characterize the free-carrier plasma dispersion effect infully-etched silicon waveguides, with various dielectric material claddings,due to fixed and interface charges at the silicon-dielectric interfaces. Thevalues used for these charges are obtained from the measuredcapacitance-voltage (C-V) characteristics of SiO2, SiNx, and Al2O3 thin filmsdeposited on silicon substrates. The effect of the charges on the properties ofsilicon waveguides is then calculated using the semiconductor physics toolSilvaco in combination with the finite-difference time-domain (FDTD) methodsolver Lumerical. Our results show that, in addition to being a critical factorin the analysis of such active devices as capacitively-driven siliconmodulators, this effect should also be taken into account when considering thepropagation losses of passive silicon waveguides.

Characterizing the effects of free carriers in fully-etched, dielectric-clad silicon waveguides