English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Platinum silicide Schottky diodes formed on films of polycrystalline Si dopedby phosphorus are demonstrated to be efficient and manufacturableCMOS-compatible temperature sensors for microbolometer detectors of radiation.Thin-film platinum silicide/poly-Si diodes have been produced by aCMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substratessimulating the bolometer cells. Layer structure and phase composition of theoriginal Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by alow-temperature process have been studied by means of the scanning transmissionelectron microscopy; they have also been explored by means of thetwo-wavelength X-ray structural phase analysis and the X-ray photoelectronspectroscopy. Temperature coefficient of voltage for the forward current of asingle diode is shown to reach the value of about $-$2%/$^{\circ}$C in thetemperature interval from 25 to 50$^{\circ}$C.

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers