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The exchange bias effect is commonly used to shift the coercive field of aferromagnet. This technique is crucial for the use of magnetic tunnel junctionsas logic or memory devices. Therefore, an independent switching of the twoferromagnetic electrodes is necessary to guarantee a reliable readout. Here, wedemonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used toapply a unidirectional anisotropy to magnetic tunnel junctions. For this, weuse epitaxial Ni-Mn-Sn films as pinning layers for microfabricatedCoFeB/MgO/CoFeB magnetic tunnel junctions. We compare the exchange bias field($H_{\text{EB}}$) measured after field cooling in $-10$\,kOe external field bymagnetization measurements with $H_{\text{EB}}$ obtained from tunnelmagnetoresistance measurements. Consistent for both methods we find an exchangebias of about $H_{\text{EB}}=130$\,Oe at 10\,K, which decreases with increasingtemperature and vanishes above 70\,K.

Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions