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We report a detailed analysis of magneto-transport properties of top- andback-gated LaAlO$_3$/SrTiO$_3$ heterostructures. Efficient modulation inmagneto-resistance, carrier density, and mobility of the two-dimensionalelectron liquid present at the interface is achieved by sweeping top and backgate voltages. Analyzing those changes with respect to the carrier densitytuning, we observe that the back gate strongly modifies the electron mobilitywhile the top gate mainly varies the carrier density. The evolution of thespin-orbit interaction is also followed as a function of top and back gating.

Magneto-transport study of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures