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We demonstrate current-induced bipolar switching in in-plane magnetizedspin-valve devices that incorporate a perpendicularly magnetized spinpolarizing layer. Further, hysteretic transitions into a state withintermediate resistance occur at high currents, again for both currentpolarities. These transitions are shown to be consistent with a macrospin modelthat considers a spin-polarized current that is tilted with respect to the freelayer plane, due to the presence of spin-transfer torque from the polarizinglayer. These unique switching characteristics, which have their origin in thenoncollinear layer magnetizations, are of interest for magnetic random accessmemory and spin-torque oscillator devices.

Bipolar switching in an orthogonal spin transfer spin valve device