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We present microwave-frequency NbTiN resonators on silicon, systematicallyachieving internal quality factors above 1 M in the quantum regime. We use twotechniques to reduce losses associated with two-level systems: an additionalsubstrate surface treatment prior to NbTiN deposition to optimize themetal-substrate interface, and deep reactive-ion etching of the substrate todisplace the substrate-vacuum interfaces away from high electric fields. Thetemperature and power dependence of resonator behavior indicate that two-levelsystems still contribute significantly to energy dissipation, suggesting thatmore interface optimization could further improve performance.

Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates