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Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit muchenhanced sensitivity for gas sensing. However, carrier transport across thejunctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottkyjunctions under reverse-bias are investigated by temperature-dependentcurrent-voltage measurements. A reduction in barrier height with increasingreverse-bias is observed for all junctions, suggesting electric-field enhancedthermionic emission. Further analysis of the field dependence of the reversecurrent reveals that while carrier transport in Gr/SiC Schottky junctionsfollows the Poole-Frenkel mechanism, it deviates from both the Poole-Frankeland Schottky mechanisms in Gr/Si and Gr/GaAs junctions, particularly for lowtemperatures and fields.

Carrier transport in reverse-biased graphene/semiconductor Schottky junctions