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Final published versionHard X-ray photoelectron spectroscopy (HAXPES) analyses were carried out on metal-oxidesemiconductor(MOS) samples consisting of Si, thick and thin Al2O3, and a Ti metal cap. Using Si1s and C 1s core levels for an energy reference, the Al 1s and Si 1s spectra were analyzed to revealinformation about the location and roles of charges throughout the MOS layers. With differentoxide thicknesses (2 nm and 23 nm), the depth sensitivity of HAXPES is exploited to probe differentregions in the MOS structure. Post Ti deposition results indicated unexpected band alignmentvalues between the thin and thick films, which are explained by the behavior of mobile chargewithin the Al2O3 layer. VCUniversity of Delaware. Department of Materials Science and Engineering

Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al2O3/Si using hard x-ray photoelectron spectroscopy