English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

We report a model for metalorganic vapor-phase epitaxy on non-planarsubstrates, specifically V-grooves and pyramidal recesses, which we apply tothe growth of InGaAs nanostructures. This model, based on a set of coupledreaction-diffusion equations, one for each facet in the system, accounts forthe facet-dependence of all kinetic processes (e.g., precursor decomposition,adatom diffusion, and adatom lifetimes) and has been previously applied toaccount for the temperature, concentration, and temporal-dependence of AlGaAsnanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses.In the present study, the growth of In$_{0.12}$Ga$_{0.88}$As quantum wires atthe bottom of V-grooves is used to determine a set of optimized kineticparameters. Based on these parameters, we have modeled the growth ofIn$_{0.25}$Ga$_{0.75}$As nanostructures formed in pyramidal site-controlledquantum-dot systems, successfully producing a qualitative explanation for thetemperature-dependence of their optical properties, which have been reported inprevious studies. Finally, we present scanning electron and cross-sectionalatomic force microscopy images which show previously unreported facetting atthe bottom of the pyramidal recesses that allow quantum dot formation.

Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates