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The role of the interface potential on the effective mass of charge carriersis elucidated in this work. We develop a new theoretical formalism using aspatially dependent effective mass that is related to the magnitude of theinterface potential. Using this formalism we studied Ge quantum dots (QDs)formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering(sputter). These samples allowed us to isolate important consequences arisingfrom differences in the interface potential. We found that for a higherinterface potential, as in the case of PECVD QDs, there is a larger reductionin the effective mass, which increases the confinement energy with respect tothe sputter sample. We further understood the action of O interface states bycomparing our results with Ge QDs grown by molecular beam epitaxy. It is foundthat the O states can suppress the influence of the interface potential. Fromour theoretical formalism we determine the length scale over which theinterface potential influences the effective mass.

Influence of interface potential on the effective mass in Ge nanostructures