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Two key subjects stand out in the pursuit of semiconductor research: materialquality and contact technology. The fledging field of atomically thintransition metal dichalcogenides (TMDCs) faces a number of challenges in bothefforts. This work attempts to establish a connection between the two byexamining the gate-dependent conductance of few-layer (1-5L) WSe2 field effectdevices. Measurements and modeling of the subgap regime reveal Schottky barriertransistor behavior. We show that transmission through the contact barrier isdominated by thermionic field emission (TFE) at room temperature, despite thelack of intentional doping. The TFE process arises due to a large number ofsubgap impurity states, the presence of which also leads to high mobility edgecarrier densities. The density of states of such impurity states isself-consistently determined to be approximately 1-2x10^13 /cm^2/eV in ourdevices. We demonstrate that substrate is unlikely to be a major source of theimpurity states and suspect that lattice defects within the material itself areprimarily responsible. Our experiments provide key information to advance thequality and understanding of TMDC materials and electrical devices.

Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states