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Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown onGaAs substrates are reported. The QW two-dimensional electron gas (2DEG)channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. Inasymmetrically remote-doped samples with an HfO_{2} gate dielectric formed byatomic layer deposition, parallel conduction is eliminated and complete 2DEGchannel depletion is reached with minimal hysteresis in gate bias response ofthe 2DEG electron density. The integer quantum Hall effect with Landau levelfilling factor down to 1 is observed. A high-transparency non-alloyed Ohmiccontact to the 2DEG with contact resistance below 1{\Omega} \cdot mm isachieved at 1.8K.

Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures