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The mechanism of heat transfer and the contribution of electron-phononcoupling to thermal conductance of a metal-semiconductor interface remainsunclear in the present literature. We report ab initio simulations of atechnologically important titanium silicide (metal) - silicon (semiconductor)interface to estimate the Schottky barrier height (SBH), and the strength ofelectron-phonon and phonon-phonon heat transfer across the interface. Theelectron and phonon dispersion relations of TiSi$_2$ with C49 structure and theTiSi$_2$-Si interface are obtained using first-principles calculations withinthe density functional theory (DFT) framework. These are used to estimateelectron-phonon linewidths and the associated Eliashberg function thatquantifies coupling. We show that the coupling strength of electrons withinterfacial phonon modes is of the same order of magnitude as coupling ofelectrons to phonon modes in the bulk metal, and its contribution toelectron-phonon interfacial conductance is comparable to the harmonicphonon-phonon conductance across the interface.

Electron-Phonon Coupling and Thermal Conductance at a Metal-Semiconductor Interface: First-principles Analysis