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Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz. The lowest noise-equivalent power (NEP) was observed in SSDs on the hydrogen-intercalated sample, where a flat NEP of 2.2 nW/Hz½ and responsivity of 3.9 V/W were measured across the band. The measured NEP demonstrates the potential of graphene SSDs as zero-bias microwave detectors.

Graphene self-switching diodes as zero-bias microwave detectors