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A theory is developed for calculating vertical tunneling current between twosheets of bilayer graphene separated by a thin, insulating layer of hexagonalboron nitride, neglecting many-body effects. Results are presented usingphysical parameters that enable comparison of the theory with recently reportedexperimental results. Observed resonant tunneling and negative differentialresistance in the current-voltage characteristics are explained in terms of theelectrostatically-induced band gap, gate voltage modulation, density of statesnear the band edge, and resonances with the upper sub-band. These observationsare compared to ones from similar heterostructures formed with monolayergraphene.

Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures