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Titanium-island formation on graphene as a function of defect density isinvestigated. When depositing titanium on pristine graphene, titanium atomscluster and form islands with an average diameter of about 10nm and an averageheight of a few atomic layers. We show that if defects are introduced in thegraphene by ion bombardment, the mobility of the deposited titanium atoms isreduced and the average diameter of the islands decreases to 5nm withmonoatomic height. This results in an optimized coverage for hydrogen storageapplications since the actual titanium surface available per unit graphene areais significantly increased.

Increasing the active surface of titanium islands on graphene by nitrogen sputtering