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We study the photoresponse of graphene field effect transistors usingscanning photocurrent microscopy in near and far field configurations, and wefind that the response of graphene under a source-drain bias voltage away fromthe contacts is dominated by the bolometric effect caused by laser inducedheating. We find no significant change in the photocurrent with the opticalmodulation frequency upto 100 kHz. Although the magnitude of the bolometriccurrent scales with bias voltage, it also results in noise. The frequencydependence of this noise indicates that it has a 1/f character, scales with thebias voltage and limits the detectable bolometric photoresponse at low opticalpowers.

Limits on the Bolometric response of Graphene due to flicker noise